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| MITSUBISHI SEMICONDUCTOR MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. O U TLIN E 24 +/- 0.3 unit : m m 2MIN FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz High power gain GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz High power added efficiency P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. (1) R1.2 0.6 +/- 0.15 17.4 +/- 0.2 2MIN 8.0 +/- 0.2 (2) (3) 20.4 +/- 0.2 APPLICATION item 01 : 3.6 - 4.2 GHz band power amplifier item 51 : 3.6 - 4.2 GHz band digital radio communication 0.1 +/- 0.05 Limits Typ. 24 8 45 11 8 36 -45 0.8 Max. -5 1 QUALITY GRADE 4.3 +/- 0.4 IG RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 8 (A) RG=25 (ohm) 1.4 ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT *1 Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature (Ta=25deg.C) Ratings -15 -15 25 -80 168 150 175 -65 / +175 Unit V V A mA mA W G F-38 (1) gate (2) s ourc e(flange) (3)drain < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. deg.C deg.C *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. IM3 *2 Rth(ch-c) *3 (Ta=25deg.C) Test conditions VDS = 3V , VGS = 0V VDS = 3V , ID = 8A VDS = 3V , ID = 160mA Min. -2 44 VDS=10V, ID(RF off)=8A, f=3.6 - 4.2GHz 10 -42 delta Vf method Unit A S V dBm dB A % dBc deg.C/W Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=3.6,3.9,4.2GHz,delta f=10MHz *3 : Channel-case MITSUBISHI ELECTRIC June/2004 2.4 +/- 0.2 16.7 MITSUBISHI SEMICONDUCTOR MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. f 47 VDS=10V IDS=8A P1dB Po, P.A.E. vs. Pin 22 50 VDS=10V IDS=8A f=3.9GHz Po 40 60 100 46 OUTPUT POWER P1dB (dBm) 20 OUTPUT POWER Po (dBm) 44 16 LINEAR POWER GAIN GLP (dB) 45 18 35 43 GLP 14 add A 40 42 12 30 20 41 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 FREQUENCY f (GHz) Po,IM3 vs. Pin 40 38 VDS=10V IDS=8A f1=4.20GHz f2=4.21GHz 2-tone test 10 25 20 25 30 35 40 INPUT POWER Pin (dBm) 0 10 0 Po -10 -20 OUTPUT POWER Po (dBm S.C.L.) 36 34 32 30 IM3 -30 -40 28 26 17 19 21 23 25 27 29 INPUT POWER Pin (dBm S.C.L.) 31 -50 -60 S parameters f (GHz) 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 ( Ta=25deg.C , VDS=10(V),IDS=8(A) ) S-Parameter (TYP.) S21 S12 Magn. Angle(deg) Magn. Angle(deg) 3.71 42 0.05 -21 3.82 3.84 3.81 3.86 3.87 3.83 3.64 3.25 14 -15 -41 -68 -97 -125 -156 174 0.06 0.07 0.07 0.08 0.09 0.09 0.09 0.09 -52 -80 -107 -134 -162 169 141 108 S22 Angle(deg) -29 -56 -94 -142 -177 149 122 93 63 S11 Magn. Angle(deg) 0.51 165 0.55 0.56 0.54 0.47 0.37 0.27 0.26 0.40 125 93 67 40 5 -42 -117 -174 IM3 (dBc) Magn. 0.39 0.29 0.22 0.21 0.23 0.26 0.26 0.21 0.09 MITSUBISHI ELECTRIC June/2004 POWER ADDED EFFICIENCY (%) 45 80 MITSUBISHI SEMICONDUCTOR MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 |
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